The HI2000 model of pressure transducers use Silicon-on-sapphire technology to offer levels of accuracy and perfomance previously unobtainable or prohibitively expensive.
Silicon strain gauge resistors are epitaxially grown onto the surface of the sapphire diaphragms, foming a adiation hardened structure. This structure provides virtually unmeasurable hysteresis and outstanding insulation properties which protect the strain gauge from the influences of pulse-electromagnetic fields.

The sensor construction is completed by mating the sapphire diaphragm with a BT9 titanium alloy pressure port and diaphragm. The titanium/sapphire assembly enables the transducer to be very stable at high or low temperatures(-50°C to +150°C).

Typical applications include testing of jet engines and other machinery operating at high temperatures, process monitoring, oil and gas exploration equipment, undersea exploration, military and other applications requiring accurate results at high or varying temperatures.

Available immediately in pressure ranges from 0...1 bar to 0...1.000 bar and with electrical outputs of 0...100 mV, 0...5 Vdc and 0...10 Vdc.